Datasheet4U Logo Datasheet4U.com

MRFG35003M6T1 RF Power Field Effect Transistor

MRFG35003M6T1 Description

www.DataSheet4U.com MOTOROLA Freescale Semiconductor, Inc.SEMICONDUCTOR TECHNICAL DATA Order this document by MRFG35003M6T1/D The RF GaAs Line .
12 pF Chip Capacitor, B Case, ATC 0.

MRFG35003M6T1 Features

* 70 0.570 0.571 0.573 S21 ∠φ 34.63 33.54 32.46 31.37 30.25 29.09 27.89 26.69 25.53 24.33 23.09 21.89 20.67 19.44 18.26 17.08 15.88 14.68 13.50 12.39 11.29 10.20 9.15 8.10 7.10

MRFG35003M6T1 Applications

* Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in Class AB Customer Premise Equipment (CPE) applications.
* Typical W
* CDMA Performance:
* 42 dBc ACPR, 3.55 GHz, 6 Volts, IDQ = 180 mA Output Power
* 450 mWatts Power Gain
* 9

📥 Download Datasheet

Preview of MRFG35003M6T1 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MRFG35003M6T1
Manufacturer
Motorola
File Size
356.60 KB
Datasheet
MRFG35003M6T1_Motorola.pdf
Description
RF Power Field Effect Transistor

📁 Related Datasheet

  • MRFG35003N6T1 - RF Power Field Effect Transistor (Freescale Semiconductor)
  • MRFG35003NT1 - RF Power Field Effect Transistors (Freescale Semiconductor)
  • MRFG35002N6AT1 - Gallium Arsenide PHEMT RF Power Field Effect Transistor (Freescale Semiconductor)
  • MRFG35002N6T1 - Gallium Arsenide PHEMT RF Power Field Effect Transistor (Freescale Semiconductor)
  • MRFG35005MT1 - Gallium Arsenide PHEMT RF Power Field Effect Transistor (Freescale Semiconductor)
  • MRFG35005NT1 - Gallium Arsenide PHEMT RF Power Field Effect Transistor (Freescale Semiconductor)
  • MRFG35010 - Gallium Arsenide PHEMT RF Power Field Effect Transistor (Freescale Semiconductor)
  • MRFG35010ANT1 - RF Power Field Effect Transistor (Freescale Semiconductor)

📌 All Tags

Power Field Effect Transistor Motorola
Motorola MRFG35003M6T1-like datasheet