MRFG35003M6T1 RF Power Field Effect Transistor

Motorola

Description

www.DataSheet4U.com MOTOROLA Freescale Semiconductor, Inc.SEMICONDUCTOR TECHNICAL DATA Order this document by MRFG35003M6T1/D The RF GaAs Line .
12 pF Chip Capacitor, B Case, ATC 0.

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Datasheet Specifications

Part number: MRFG35003M6T1
Manufacturer: Motorola
File Size: 356.60 KB
Datasheet: MRFG35003M6T1_Motorola.pdf
Description: RF Power Field Effect Transistor

Features

* 70 0.570 0.571 0.573 S21 ∠φ 34.63 33.54 32.46 31.37 30.25 29.09 27.89 26.69 25.53 24.33 23.09 21.89 20.67 19.44 18.26 17.08 15.88 14.68 13.50 12.39 11.29 10.20 9.15 8.10 7.10

Applications

* Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in Class AB Customer Premise Equipment (CPE) applications.
* Typical W
* CDMA Performance:
* 42 dBc ACPR, 3.55 GHz, 6 Volts, IDQ = 180 mA Output Power
* 450 mWatts Power Gain
* 9

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MRFG35003M6T1 Power Field Effect Transistor Motorola

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