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MRFG35003MT1 - RF Power Field Effect Transistor

Description

7.5 pF Chip Capacitors, B Case 3.9 pF Chip Capacitors (0805) 10 pF Chip Capacitors, A Case 100 pF Chip Capacitors, A Case 100 pF Chip Capacitors, B Case 1000 pF Chip Capacitors, B Case 3.9 µF Chip Capacitors, B Case 0.1 µF Chip Capacitors, B Case 22 µF, 35 V Tantalum Surface Mount Capacitors 0.7 pF

Features

  • .10 3.15 3.20 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90 3.95 4.00 4.05 4.10 4.15 4.20 4.25 4.30 4.35 4.40 4.45 4.50 4.55 4.60 4.65 4.70 4.75 4.80 4.85 4.90 4.95 5.00 S11 |S11| 0.868 0.866 0.866 0.868 0.865 0.864 0.865 0.864 0.861 0.863 0.862 0.860 0.862 0.861 0.860 0.862 0.861 0.860 0.861 0.862 0.862 0.861 0.862 0.861 0.861 0.861 0.859 0.858 0.859 0.859 0.857 0.857 0.855 0.855 0.855 0.854 0.853 0.851 0.851 0.848 0.849 0.845 0.841 0.841 ∠φ 136.03 134.67 133.02 131.47 1.

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Datasheet preview – MRFG35003MT1

Datasheet Details

Part number MRFG35003MT1
Manufacturer Motorola
File Size 362.14 KB
Description RF Power Field Effect Transistor
Datasheet download datasheet MRFG35003MT1 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MRFG35003MT1/D The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W–CDMA Performance: –42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 300 mWatt Power Gain — 11.5 dB Efficiency — 25% MRFG35003MT1 3.5 GHz, 3 W, 12 V POWER FET GaAs PHEMT Freescale Semiconductor, Inc... • 3 Watts P1dB @ 3.
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