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MRFG35003MT1 RF Power Field Effect Transistor

MRFG35003MT1 Description

www.DataSheet4U.com MOTOROLA Freescale Semiconductor, Inc.SEMICONDUCTOR TECHNICAL DATA Order this document by MRFG35003MT1/D The RF GaAs Line G.
7.

MRFG35003MT1 Features

* .10 3.15 3.20 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90 3.95 4.00 4.05 4.10 4.15 4.20 4.25 4.30 4.35 4.40 4.45 4.50 4.55 4.60 4.65 4.70 4.75 4.80 4.85 4.90 4.95 5.00 S11 |S11| 0.868 0.866 0.866 0.868 0.865 0.864 0.865 0.864 0.861 0.863 0.862 0.860 0.862 0.861 0.860 0.862

MRFG35003MT1 Applications

* with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications.
* Typical W
* CDMA Performance:
* 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Outp

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Datasheet Details

Part number
MRFG35003MT1
Manufacturer
Motorola
File Size
362.14 KB
Datasheet
MRFG35003MT1_Motorola.pdf
Description
RF Power Field Effect Transistor

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Power Field Effect Transistor Motorola
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