Datasheet4U Logo Datasheet4U.com

MRFG35010MT1 RF Power Field Effect Transistor

MRFG35010MT1 Description

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRFG35010MT1/D The RF GaAs Line G.
7.

MRFG35010MT1 Features

* 5 0.614 0.613 0.613 0.614 0.614 S21 ∠φ 23.27 22.02 20.80 19.56 18.28 16.96 15.64 14.29 13.00 11.67 10.3

MRFG35010MT1 Applications

* with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications.
* Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power

📥 Download Datasheet

Preview of MRFG35010MT1 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MRFG35010MT1
Manufacturer
Motorola
File Size
327.09 KB
Datasheet
MRFG35010MT1_Motorola.pdf
Description
RF Power Field Effect Transistor

📁 Related Datasheet

  • MRFG35010 - Gallium Arsenide PHEMT RF Power Field Effect Transistor (Freescale Semiconductor)
  • MRFG35010ANT1 - RF Power Field Effect Transistor (Freescale Semiconductor)
  • MRFG35010AR1 - Gallium Arsenide PHEMT RF Power Field Effect Transistor (Freescale Semiconductor)
  • MRFG35002N6AT1 - Gallium Arsenide PHEMT RF Power Field Effect Transistor (Freescale Semiconductor)
  • MRFG35002N6T1 - Gallium Arsenide PHEMT RF Power Field Effect Transistor (Freescale Semiconductor)
  • MRFG35003N6T1 - RF Power Field Effect Transistor (Freescale Semiconductor)
  • MRFG35003NT1 - RF Power Field Effect Transistors (Freescale Semiconductor)
  • MRFG35005MT1 - Gallium Arsenide PHEMT RF Power Field Effect Transistor (Freescale Semiconductor)

📌 All Tags

Power Field Effect Transistor Motorola
Motorola MRFG35010MT1-like datasheet