MRFG35010MT1 RF Power Field Effect Transistor

Motorola

Description

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRFG35010MT1/D The RF GaAs Line G.
7.

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Datasheet Specifications

Part number: MRFG35010MT1
Manufacturer: Motorola
File Size: 327.09 KB
Datasheet: MRFG35010MT1_Motorola.pdf
Description: RF Power Field Effect Transistor

Features

* 5 0.614 0.613 0.613 0.614 0.614 S21 ∠φ 23.27 22.02 20.80 19.56 18.28 16.96 15.64 14.29 13.00 11.67 10.3

Applications

* with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications.
* Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power

MRFG35010MT1 Distributors

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MRFG35010MT1 Power Field Effect Transistor Motorola

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