MRFG35010MT1 Datasheet - Motorola

MRFG35010MT1 RF Power Field Effect Transistor

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRFG35010MT1/D The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW.

MRFG35010MT1 Features

* 5 0.614 0.613 0.613 0.614 0.614 S21 ∠φ 23.27 22.02 20.80 19.56 18.28 16.96 15.64 14.29 13.00 11.67 10.3

MRFG35010MT1 Datasheet (327.09 KB)

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Datasheet Details

Part number:

MRFG35010MT1

Manufacturer:

Motorola

File Size:

327.09 KB

Description:

Rf power field effect transistor.

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