Datasheet Details
Part number:
MRFG35010MT1
Manufacturer:
Motorola
File Size:
327.09 KB
Description:
RF Power Field Effect Transistor
Features
* 5 0.614 0.613 0.613 0.614 0.614 S21 ∠φ 23.27 22.02 20.80 19.56 18.28 16.96 15.64 14.29 13.00 11.67 10.3
Datasheet Details
Part number:
MRFG35010MT1
Manufacturer:
Motorola
File Size:
327.09 KB
Description:
RF Power Field Effect Transistor
Features
* 5 0.614 0.613 0.613 0.614 0.614 S21 ∠φ 23.27 22.02 20.80 19.56 18.28 16.96 15.64 14.29 13.00 11.67 10.3
MRFG35010MT1, RF Power Field Effect Transistor
7.5 pF Chip Capacitors, B Case, ATC 0.4 pF Chip Capacitors (0805), AVX 0.2 pF Chip Capacitors (0805), AVX 3.9 pF Chip Capacitors, AVX 10 pF Chip Capacitors, A Case, ATC 100 pF Chip Capacitors, A Case, ATC 100 pF Chip Capacitors, B Case, ATC 1000 pF Chip Capacitors, B Case, ATC 0.1 µF Chip Capacitors
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
Order this document by MRFG35010MT1/D The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz.
Device is unmatched and is suitable for use in Class AB linear base station applications.
Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW
MRFG35010MT1 Distributor
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