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AO4407A - P-Channel MOSFET

Datasheet Summary

Description

The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -30V ID = -12A (VGS = -20V) RDS(ON) < 11mΩ (VGS = -20V) RDS(ON) < 13mΩ (VGS = -10V) RDS(ON) < 17mΩ (VGS = -6V) SOIC-8 D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Avalanche Current G Repetitive avalanche energy L=0.3mH TA=25° C Power Dissipation A TA=70° C G B Maximum -30 ±25 -12 -10 -60 -26 101 3.1 2.0 -55 to 150 Units V V VGS TA=25° C C TA=70° ID IDM IAR.

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Datasheet Details

Part number AO4407A
Manufacturer Freescale
File Size 461.35 KB
Description P-Channel MOSFET
Datasheet download datasheet AO4407A Datasheet
Additional preview pages of the AO4407A datasheet.

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Full PDF Text Transcription

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AO4407A 30V P-Channel MOSFET General Description The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Features VDS = -30V ID = -12A (VGS = -20V) RDS(ON) < 11mΩ (VGS = -20V) RDS(ON) < 13mΩ (VGS = -10V) RDS(ON) < 17mΩ (VGS = -6V) SOIC-8 D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Avalanche Current G Repetitive avalanche energy L=0.3mH TA=25° C Power Dissipation A TA=70° C G B Maximum -30 ±25 -12 -10 -60 -26 101 3.1 2.
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