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MRF5S19150HR3 - RF Power Field Effect Transistors

MRF5S19150HR3 Description

Freescale Semiconductor Technical Data Document Number: MRF5S19150H Rev.2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode.
MRF5S19150HR3 MRF5S19150HSR3 RF Device Data Freescale Semiconductor 3 C17 C18 C9 B1 R3 VGG R2 www.

MRF5S19150HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 V Operation
* Integrated ESD Protection
* Lower Thermal Resistance Package
* Low Gold Plating Thickness on

MRF5S19150HR3 Applications

* at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. www. datasheet4u. com
* Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1400 mA, Avg. , Pout = 32 Watts Avg. , Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic

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Power Field Effect Transistors Freescale Semiconductor
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