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MRF6P9220HR3 RF Power Field Effect Transistor

MRF6P9220HR3 Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev.2, 5/2006 RF Power Field Effect Transistor N - Channel.
Ferrite Beads, Short 1.

MRF6P9220HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Device Designed for Push - Pull Operation Only
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Lower Thermal

MRF6P9220HR3 Applications

* with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
* Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1600 mA, Po

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Power Field Effect Transistor Freescale Semiconductor
Freescale Semiconductor MRF6P9220HR3-like datasheet