MRF6S9160HSR3, MRF6S9160HR3 RF Power Field Effect Transistors

Freescale Semiconductor

MRF6S9160HSR3 Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev.1, 5/2006 RF Power Field Effect Transistors N - Channe.
Ferrite Beads, Small 47 pF Chip Capacitors 0.

MRF6S9160HSR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* Lower Thermal Resistance Package
* Low Gold Plating Thickness

MRF6S9160HSR3 Applications

* with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications.
* Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1200 mA, Pout = 35 Watts Avg. , IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MH

📥 Download Datasheet

MRF6S9160HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6S9160HSR3, MRF6S9160HR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF6S9160HSR3, MRF6S9160HR3
Manufacturer: Freescale Semiconductor
File Size: 563.31 KB
Datasheet: MRF6S9160HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF6S9160HSR3, MRF6S9160HR3.
Please refer to the document for exact specifications by model.

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Power Field Effect Transistors Freescale Semiconductor

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