GT120N10 Datasheet - GOFORD

GT120N10 MOSFET

The GT120N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching a.

GT120N10 Features

* VDSS @R10DVS(T(OyNp)) ID 100V 3.7mΩ 120A

* Excellent gate charge x RDS(on) product

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* RoHS Compliant

* 100% UIS tested Application

* DC/DC Converter

* Ideal for high-frequency switching and synchronous

GT120N10-GOFORD.pdf

GT120N10 Datasheet Preview — Preview of GT120N10 PDF

Datasheet Details

Part number:

GT120N10

Manufacturer:

GOFORD

File Size:

2.00 MB

Description:

Mosfet.

📁 Related Datasheet

GT1216 Multi-Function EVB (Longsys)

GT125N10 MOSFET (GOFORD)

GT10 Programmable Display (NAiS)

GT1003B MOSFET (GOFORD)

GT100DA120U Insulated Gate Bipolar Transistor (Vishay Siliconix)

GT100DA60U Insulated Gate Bipolar Transistor (Vishay Siliconix)

GT100LA120UX IGBT (Vishay Siliconix)

GT100NA120UX IGBT (Vishay Siliconix)

TAGS

GT120N10 GT120N10 MOSFET GOFORD

GT120N10 Distributor