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GT120N10 Datasheet - GOFORD

MOSFET

GT120N10 Features

* VDSS @R10DVS(T(OyNp)) ID 100V 3.7mΩ 120A

* Excellent gate charge x RDS(on) product

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* RoHS Compliant

* 100% UIS tested Application

* DC/DC Converter

* Ideal for high-frequency switching and synchronous

GT120N10 General Description

The GT120N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching a.

GT120N10 Datasheet (2.00 MB)

Preview of GT120N10 PDF

Datasheet Details

Part number:

GT120N10

Manufacturer:

GOFORD

File Size:

2.00 MB

Description:

Mosfet.

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