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GT120N10 - MOSFET

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Datasheet Details

Part number	GT120N10
Manufacturer	GOFORD
File Size	2.00 MB
Description	MOSFET
Datasheet	GT120N10-GOFORD.pdf

GT120N10 Product details

Description

The GT120N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Features

VDSS @R10DVS(T(OyNp)) ID 100V 3.7mΩ 120A.
Excellent gate charge x RDS(on) product.
Very low on-resistance RDS(on).
175 °C operating temperature.
RoHS Compliant.
100% UIS tested.

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Published: Nov 14, 2024 |