Part number:
GT125N10
Manufacturer:
GOFORD
File Size:
3.85 MB
Description:
Mosfet.
Datasheet Details
GT125N10 Features
* Low RDS(on) & FOM
* Extremely low switching loss
* Excellent stability and uniformity
* Fast switching and soft recovery
* RoHS Compliant VDSS RDS(ON) ID @10V (Typ.) 100V 4.1 mΩ 130A Applications
* Consumer electronic power supply
* Motor control
* Synchronous-r
Datasheet Details
GT125N10
GOFORD
3.85 MB
Mosfet.
📁 Related Datasheet
GT120N10 MOSFET (GOFORD)
GT1216 Multi-Function EVB (Longsys)
GT10 Programmable Display (NAiS)
GT1003B MOSFET (GOFORD)
GT100DA120U Insulated Gate Bipolar Transistor (Vishay Siliconix)
GT100DA60U Insulated Gate Bipolar Transistor (Vishay Siliconix)
GT100LA120UX IGBT (Vishay Siliconix)
GT100NA120UX IGBT (Vishay Siliconix)
GT125N10 Distributor