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GS-065-004-1-L 650V E-mode GaN transistor

GS-065-004-1-L Description

Please note that GaN Systems is an Infineon Technologies Company The document following this cover page is marked as “GaN Systems” document as this is.
The GS-065-004-1-L is an enhancement mode GaN-onSilicon power transistor.

GS-065-004-1-L Features

* 650 V enhancement mode power transistor
* 850 V transient drain-to-source voltage
* Bottom-cooled, small 5x6 mm PDFN package
* RDS(on) = 450 mΩ
* IDSmax,DC = 4 A / IDSmax,Pulse = 7.1 A
* Ultra-low FOM
* Simple gate drive requirements (0 V to

GS-065-004-1-L Applications

* Power Adapters
* LED lighting drivers
* Fast Battery Charging
* Power Factor Correction
* Appliance Motor Drives
* Wireless Power Transfer

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Datasheet Details

Part number
GS-065-004-1-L
Manufacturer
GaN Systems
File Size
1.08 MB
Datasheet
GS-065-004-1-L-GaNSystems.pdf
Description
650V E-mode GaN transistor

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650V E-mode GaN transistor GaN Systems
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