BCF81 Datasheet, Transistors, Guangdong Kexin

BCF81 Features

• Transistors +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage E

PDF File Details

Part number:

BCF81

Manufacturer:

Guangdong Kexin

File Size:

69.00kb

Download:

📄 Datasheet

Description:

Npn general purpose transistors.

TAGS

BCF81

Guangdong Kexin

📁 Related Datasheet

BCF81 - NPN general purpose transistor (NXP)
DISCRETE SEMICONDUCTORS .. DATA SHEET BCF81 NPN general purpose transistor Product specification Supersedes data of 1997 May 22 File.

BCF81 - Surface mount Si-Epitaxial PlanarTransistors (Diotec Semiconductor)
BCF 81 NPN .. General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberf.

BCF020T - HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)
BCF020T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm) The BeRex BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.

BCF030T - HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)
BCF030T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm) The BeRex BCF030T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.

BCF040T - HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (BeRex)
BCF040T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 400 µm) The BeRex BCF040T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.

BCF060T - HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)
BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm) The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.

BCF080T - HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)
BCF080T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 800 µm) The BeRex BCF080T is a GaAs Power MESFET whose nominal 0.3 micron gate length a.

BCF120T - HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (BeRex)
BCF120T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 1200 µm) The BeRex BCF120T is a GaAs Power MESFET whose nominal 0.3 micron gate length .

BCF240T - HIGH EFFICIENCY HETEROJUNCTION POWER FET (BeRex)
BCF240T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 2400 µm) The BeRex BCF240T is a GaAs Power MESFET whose nominal 0.3 micron gate length .

BCF29 - PNP general purpose transistors (NXP)
DISCRETE SEMICONDUCTORS .. DATA SHEET book, halfpage M3D088 BCF29; BCF30 PNP general purpose transistors Product specification Supe.