HM10DN06D N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM10DN06D N-Channel Enhancement Mode Power MOSFET General .
The HM10DN06D is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate chargens for most of.

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Datasheet Specifications

Part number: HM10DN06D
Manufacturer: H&M Semiconductor
File Size: 1.50 MB
Datasheet: HM10DN06D-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available DFN5X6-8L t op view Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gat

Applications

* . The HM10DN06D meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. Product Summery BVDSS RDSON 60V 34 mΩ ID 10 A Applicatio z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load

HM10DN06D Distributors

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HM10DN06D N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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