HM10DN06D Datasheet - H&M Semiconductor

HM10DN06D N-Channel Enhancement Mode Power MOSFET

The HM10DN06D is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications . The HM10DN06D meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliab.

HM10DN06D Features

* z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available DFN5X6-8L t op view Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gat

HM10DN06D-HMSemiconductor.pdf