HM10DP06D P-Channel Enhancement Mode Field Effect Transistor

H&M Semiconductor

Description

HM'3' P-Channel Enhancement Mode Field Effect Transistor Product Summary * VDS -60V * ID -10A * RDS(ON)( at VGS= -4.5V) ＜13.
Trench Power MV MOSFET technology. High density cell design for Low RDS(ON). High Speed switching Applications. Battery protecti.

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Datasheet Specifications

Part number: HM10DP06D
Manufacturer: H&M Semiconductor
File Size: 857.79 KB
Datasheet: HM10DP06D-HMSemiconductor.pdf
Description: P-Channel Enhancement Mode Field Effect Transistor

Applications

* Battery protection
* Load switch
* Power management
* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source Voltage VDS -60 V Gate-source Voltage VGS Drain Current B TA=25℃ @ Steady State TA=100℃ @ Steady State ID Drain Cu

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HM10DP06D P-Channel Enhancement Mode Field Effect Transistor H&M Semiconductor

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