Datasheet Details
Part number:
HM25SDN03Q
Manufacturer:
H&M Semiconductor
File Size:
533.03 KB
Description:
Dual Asymmetric N-Channel Enhancement Mode MOSFET
HM25SDN03Q HM25SDN03Q Dual Asymmetric N-Channel Enhancement Mode MOSFET * Features * Pin configuration VDS VGS RDSON Typ.
ID Top view 12mR@10V 30V ±20V 25A 1mR@4V5 * Description This device uses advanced trench technology to provide excellent RDSON and low gate charge.
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HM25SDN03Q-HMSemiconductor.pdf
HM25SDN03Q, Dual Asymmetric N-Channel Enhancement Mode MOSFET
This device uses advanced trench technology to provide excellent RDSON and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
* Applications * Power Management in notebook computer * Portable Equipment * Battery Powered Systems * Ordering
HM25SDN03Q Distributor
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