HM25SDN03Q Dual Asymmetric N-Channel Enhancement Mode MOSFET

H&M Semiconductor

Description

HM25SDN03Q HM25SDN03Q Dual Asymmetric N-Channel Enhancement Mode MOSFET * .
This device uses advanced trench technology to provide excellent RDSON and low gate charge.

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Datasheet Specifications

Part number: HM25SDN03Q
Manufacturer: H&M Semiconductor
File Size: 533.03 KB
Datasheet: HM25SDN03Q-HMSemiconductor.pdf
Description: Dual Asymmetric N-Channel Enhancement Mode MOSFET

Features

* Pin configuration VDS VGS RDSON Typ. ID Top view 12mR@10V 30V ±20V 25A 1mR@4V5

Applications

* Applications
* Power Management in notebook computer
* Portable Equipment
* Battery Powered Systems
* Ordering Information Device Package Shipping HM25SDN03Q DFN3X3 5000/Reel Bottom View HM25SDN03Q YYWW Marking HM25SDN03Q
* Absolute Maximum Ratings(TA=25℃ unless ot

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HM25SDN03Q Dual Asymmetric N-Channel Enhancement Mode MOSFET H&M Semiconductor

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