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HM12N02D - N-Channel Enhancement Mode Power MOSFET

HM12N02D Description

DFNWB2X2-6L-J Plastic-Encapsulate MOSFETS HM12N02D N-Channel MOSFET V(BR)DSS   20V   RDS(on)MAX   11mΩ@ 4.5V 13mΩ@ 2.5V 16 mΩ@1.8V 22mΩ@1.5V 41mΩ@1.

HM12N02D Features

* TrenchFET Power MOSFET

HM12N02D Applications

* Equivalent Circuit ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Para meter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current (note 1) IDM Collector Current-Pulse(Note3) RθJA Thermal Resistance from Junction to Ambient (note 2) Tj Junction Temperatu

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Datasheet Details

Part number
HM12N02D
Manufacturer
H&M Semiconductor
File Size
627.81 KB
Datasheet
HM12N02D-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
H&M Semiconductor HM12N02D-like datasheet