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HM4884 - Dual N-Channel MOSFET

HM4884 Description

HM Dual N-Channel Enhancement Mode Power MOSFET .
The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

HM4884 Features

* VDS =40V,ID =10A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 35mΩ @ VGS=4.5V Schematic diagram
* High density cell design for ultra low Rdson

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Datasheet Details

Part number
HM4884
Manufacturer
H&M semi
File Size
577.13 KB
Datasheet
HM4884-HMsemi.pdf
Description
Dual N-Channel MOSFET

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Dual N-Channel MOSFET H&M semi
H&M semi HM4884-like datasheet