Datasheet Details
- Part number
- HPA650R600SA
- Manufacturer
- HUAJING MICROELECTRONICS
- File Size
- 291.19 KB
- Datasheet
- HPA650R600SA-HUAJINGMICROELECTRONICS.pdf
- Description
- Silicon N-Channel Power MOSFET
HPA650R600SA Description
Silicon N-Channel Power MOSFET HPA650R600SA ○R General .
HPA650R600SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switchi.
HPA650R600SA Applications
* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）：
650 V 9A 28 W
0.52 Ω
Symbol Parameter
VDSS
ID IDMa1 VGS EAS a2 dv/dta3
PD TJ，Tstg
TL
Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Ene
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