HYG045P03LQ1D Datasheet, Mosfet, HUAYI

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Part number:

HYG045P03LQ1D

Manufacturer:

HUAYI

File Size:

1.14MB

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📄 Datasheet

Description:

P-channel enhancement mode mosfet.

TAGS

HYG045P03LQ1D

HUAYI

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HYG045P03LQ1U - P-Channel Enhancement Mode MOSFET (HUAYI)
+<*3/4'89 3 &KDQQHO(QKDQFHPHQW0RGH026)(7 )HDWXUH z 9 $ 5'621 PȍW\S#9*6  9 5'621  PȍW\S#9*6  9 z .

HYG045P03LQ1V - P-Channel Enhancement Mode MOSFET (HUAYI)
+<*3/4'89 3 &KDQQHO(QKDQFHPHQW0RGH026)(7 )HDWXUH z 9 $ 5'621 PȍW\S#9*6  9 5'621  PȍW\S#9*6  9 z .

HYG042N10NS1B - N-Channel Enhancement Mode MOSFET (HUAYI)
HYG042N10NS1P/B Feature  100V/160A RDS(ON)=3.5mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avail.

HYG042N10NS1P - N-Channel Enhancement Mode MOSFET (HUAYI)
HYG042N10NS1P/B Feature  100V/160A RDS(ON)=3.5mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Avail.

HYG046N04LQ1C2 - Single N-Channel Enhancement Mode MOSFET (HUAYI)
HYG046N04LQ1C2 Single N-Channel Enhancement Mode MOSFET Feature  40V/70A RDS(ON)= 4.3mΩ(typ.)@VGS = 10V RDS(ON)= 6.9mΩ(typ.)@VGS = 4.5V  100% Aval.

HYG046N04LQ1D - N-Channel MOSFET (HUAYI)
HYG046N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(typ.)@VGS = 4.5V  100% Avalanch.

HYG046N04LQ1U - N-Channel MOSFET (HUAYI)
HYG046N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(typ.)@VGS = 4.5V  100% Avalanch.

HYG046N04LQ1V - N-Channel MOSFET (HUAYI)
HYG046N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(typ.)@VGS = 4.5V  100% Avalanch.

HYG006N04LS1B6 - Single N-Channel Enhancement Mode MOSFET (HUAYI)
HYG006N04LS1B6 Single N-Channel Enhancement Mode MOSFET Feature  40V/530A RDS(ON)= 0.55mΩ(typ.) @VGS = 10V RDS(ON)=0.72 mΩ(typ.)@VGS = 4.5V  100% .

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