HYG045P03LQ1V Datasheet, Mosfet, HUAYI

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Part number:

HYG045P03LQ1V

Manufacturer:

HUAYI

File Size:

1.14MB

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📄 Datasheet

Description:

P-channel enhancement mode mosfet.

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HYG046N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(typ.)@VGS = 4.5V  100% Avalanch.
HYG046N04LQ1U - N-Channel MOSFET (HUAYI)
HYG046N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(typ.)@VGS = 4.5V  100% Avalanch.
HYG046N04LQ1V - N-Channel MOSFET (HUAYI)
HYG046N04LQ1D/U/V N-Channel Enhancement Mode MOSFET Feature  40V/75A RDS(ON)= 4.4mΩ(typ.)@VGS = 10V RDS(ON)= 6.1mΩ(typ.)@VGS = 4.5V  100% Avalanch.

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HYG045P03LQ1V P-Channel Enhancement Mode MOSFET HUAYI