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H2N5087, H2N5087_Hi PNP EPITAXIAL PLANAR TRANSISTOR

H2N5087 Description

HI-SINCERITY MICROELECTRONICS CORP.H2N5087 PNP EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6210 Issued Date : 1998.02.01 Revised Date : 2005.01.20 Pag.
This device was designed for low noise,high gain,general purpose amplifier applications for 1uA to 25mA collector current.

H2N5087 Applications

* for 1uA to 25mA collector current. Absolute Maximum Ratings TO-92
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW
* Maximum Voltages and Currents (TA=25°C

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: H2N5087, H2N5087_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
H2N5087, H2N5087_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
49.47 KB
Datasheet
H2N5087_Hi-SincerityMocroelectronics.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: H2N5087, H2N5087_Hi.
Please refer to the document for exact specifications by model.

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PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics H2N5087-like datasheet