Datasheet4U Logo Datasheet4U.com

H2N5088, H2N5088_Hi NPN EPITAXIAL PLANAR TRANSISTOR

H2N5088 Description

HI-SINCERITY MICROELECTRONICS CORP.H2N5088 NPN EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6227 Issued Date : 1993.04.12 Revised Date : 2005.01.20 Pag.
This device was designed for low noise, high gain , general purpose amplifier applications for 1uA to 25mA collector current.

H2N5088 Applications

* for 1uA to 25mA collector current. Absolute Maximum Ratings TO-92
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 350 mW
* Maximum Voltages and Currents (TA=25°C

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: H2N5088, H2N5088_Hi. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
H2N5088, H2N5088_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
45.78 KB
Datasheet
H2N5088_Hi-SincerityMocroelectronics.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: H2N5088, H2N5088_Hi.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

  • H2N60D - N-Channel MOSFET (HAOHAI)
  • H2N60F - N-Channel MOSFET (HAOHAI)
  • H2N60P - N-Channel MOSFET (HAOHAI)
  • H2N60U - N-Channel MOSFET (HAOHAI)
  • H2N7002SN - N-Channel MOSFET (HI-SINCERITY)

📌 All Tags

NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics H2N5088-like datasheet