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H2N5401, H2N5401_Hi PNP EPITAXIAL PLANAR TRANSISTOR

H2N5401 Description

HI-SINCERITY MICROELECTRONICS CORP.H2N5401 PNP EPITAXIAL PLANAR TRANSISTOR Spec.No.: HE6203 Issued Date : 1992.09.22 Revised Date : 2005.01.20 Pag.
The H2N5401 is designed for general purpose applications requiring high breakdown voltages. Complements to NPN Type H2N5551.

H2N5401 Features

* Complements to NPN Type H2N5551
* High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA)) TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: H2N5401, H2N5401_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
H2N5401, H2N5401_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
52.59 KB
Datasheet
H2N5401_Hi-SincerityMocroelectronics.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: H2N5401, H2N5401_Hi.
Please refer to the document for exact specifications by model.

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PNP EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics H2N5401-like datasheet