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H2N5551, H2N5551_Hi NPN EPITAXIAL PLANAR TRANSISTOR

H2N5551 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6219 Issued Date : 1992.09.21 Revised Date : 2004.12.28 Page No.: 1/5 H2N5551 NPN EPITAXIAL PLANA.
The H2N5551 is designed for amplifier transistor. Complements to PNP Type H2N5401. High Collector-Emitter Breakdown Volta.

H2N5551 Features

* Complements to PNP Type H2N5401
* High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA)) TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: H2N5551, H2N5551_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
H2N5551, H2N5551_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
52.66 KB
Datasheet
H2N5551_Hi-SincerityMocroelectronics.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: H2N5551, H2N5551_Hi.
Please refer to the document for exact specifications by model.

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NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics H2N5551-like datasheet