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2SJ539 Silicon P-Channel MOSFET

2SJ539 Description

2SJ539 Silicon P Channel MOS FET High Speed Power Switching ADE-208-657A (Z) 2nd.Edition Jun 1998 .

2SJ539 Features

* Low on-resistance R DS(on) = 0.16 Ω typ.
* Low drive current
* 4 V gete drive devices
* High speed switching Outline TO
* 220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SJ539 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate

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Datasheet Details

Part number
2SJ539
Manufacturer
Hitachi Semiconductor
File Size
54.47 KB
Datasheet
2SJ539_HitachiSemiconductor.pdf
Description
Silicon P-Channel MOSFET

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Silicon P-Channel MOSFET Hitachi Semiconductor
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