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CS1N80A3H Datasheet - Huajing Microelectronics

CS1N80A3H Silicon N-Channel Power MOSFET

CS1N80 A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 800 1 30 12 performance and enhance the avalanche energy. The transistor can be used in various power switch.

CS1N80A3H Features

* l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:6.7nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parame

CS1N80A3H-HuajingMicroelectronics.pdf

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Datasheet Details

Part number:

CS1N80A3H

Manufacturer:

Huajing Microelectronics

File Size:

409.94 KB

Description:

Silicon n-channel power mosfet.

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