CS1N60B1R Datasheet - Huajing Microelectronics

CS1N60B1R Silicon N-Channel Power MOSFET

CS1N60 B1R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.5 3 7 performance and enhance the avalanche energy. The transistor can be used in various power switch.

CS1N60B1R Features

* l Fast Switching l Low ON Resistance(Rdson≤8Ω) l Low Gate Charge (Typical Data:5.2nC) l Low Reverse transfer capacitances(Typical:2pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter

CS1N60B1R-HuajingMicroelectronics.pdf