CS1N60B1R Datasheet, Mosfet, Huajing Microelectronics

CS1N60B1R Features

• Mosfet l Fast Switching l Low ON Resistance(Rdson≤8Ω) l Low Gate Charge (Typical Data:5.2nC) l Low Reverse transfer capacitances(Typical:2pF) l 100% Single Pulse avalanche energy Test Applica

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Part number:

CS1N60B1R

Manufacturer:

Huajing Microelectronics

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0.98MB

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS1N60 B1R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction

CS1N60B1R Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VG

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CS1N60B1R

Huajing Microelectronics

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