CS1N60B1R Datasheet - Huajing Microelectronics

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CS1N60B1R Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS1N60 B1R ○R General .
CS1N60 B1R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve swi.

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Datasheet Details

Part number:

CS1N60B1R

Manufacturer:

Huajing Microelectronics

File Size:

0.98 MB

Description:

Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drai

CS1N60B1R Distributors

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CS1N60B1R Silicon N-Channel Power MOSFET Huajing Microelectronics

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