CS1N15ASFD-G - Silicon N-Channel Power MOSFET
CS1N15ASFD-G, the silicon N-channel Depletion-Mode VDMOSFETs, is obtained by advanced planar Technology which VDSX ID min RDS(ON)Typ reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for syst
CS1N15ASFD-G Features
* l ESD improved Capability l Depletion-mode ( Normally-on) l Fast Switching l Low On-Resistance l Improved dv/dt capability l Halogen free available 150 V 0.2 A 4 Ω Applications： Power switch circuit of adaptor and charger. Absolute（Ta= 25℃ unless otherwise specified）： Symbol Parameter VD
