Part number:
CS1N60C4D
Manufacturer:
CR Micro
File Size:
454.95 KB
Description:
Silicon n-channel power mosfet.
* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:7.5nC) l Low Reverse transfer capacitances(Typical:5.0pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Paramete
CS1N60C4D Datasheet (454.95 KB)
CS1N60C4D
CR Micro
454.95 KB
Silicon n-channel power mosfet.
📁 Related Datasheet
CS1N60C4H - Silicon N-Channel Power MOSFET
(CR Micro)
Silicon N-Channel Power MOSFET
○R
CS1N60 C4H
General Description:
CS1N60 C4H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-ali.
CS1N60C1H - Silicon N-Channel Power MOSFET
(Huajing Microelectronics)
Silicon N-Channel Power MOSFET
○R
CS1N60 C1H
General Description:
CS1N60 C1H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-a.
CS1N60C1HD - Silicon N-Channel Power MOSFET
(Huajing Microelectronics)
Huajing Discrete Devices Silicon N-Channel Power MOSFET
○R
CS1N60C1HD
General Description:
CS1N60C1HD, the silicon N-channel Enhanced VDMOSFETs, is .
CS1N60C3H - Silicon N-Channel Power MOSFET
(Huajing Microelectronics)
Silicon N-Channel Power MOSFET
CS1N60 C3H
○R
General Description:
CS1N60 C3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.
CS1N60 - VDMOS
(EDN)
..
»ª¾§·ÖÁ¢Æ÷¼þ
CS1N60(F)
CS1N60(F)ÐÍ
1.¸ÅÊöÓëÌØµã
CS1N60(F)ÊÇ ¹Øµç· ¾ßÓÐÈçÏÂÌØµã ¿ª¹ØËÙ¶Èì ̬ͨµç×èС ¿É²¢ÁªÊ¹Óà Çý¶¯¼òµ¥ ·â×°ÐÎ.
CS1N60A1H - Silicon N-Channel Power MOSFET
(Huajing Microelectronics)
Silicon N-Channel Power MOSFET
CS1N60 A1H
○R
General Description:
CS1N60 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.
CS1N60A23H - Silicon N-Channel Power MOSFET
(CR Micro)
Silicon N-Channel Power MOSFET
○R
CS1N60 A23H
General Description:
VDSS
600
CS1N60 A23H, the silicon N-channel Enhanced ID
0.8
VDMOSFETs, is o.
CS1N60A3H - Silicon N-Channel Power MOSFET
(Huajing Microelectronics)
Silicon N-Channel Power MOSFET
CS1N60 A3H
○R
General Description:
VDSS
600 V
CS1N60 A3H, the silicon N-channel Enhanced ID
0.8 A
VDMOSFETs, is .