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CS1N60C4D Datasheet - CR Micro

CS1N60C4D Silicon N-Channel Power MOSFET

VDSS 600 V CS1N60 C4D, the silicon N-channel Enhanced ID 1.5 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 32 W which reduce the conduction loss, improve switching RDS(ON)Typ 7.0 Ω performance and enhance the avalanche energy. The transistor can be used i.

CS1N60C4D Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:7.5nC) l Low Reverse transfer capacitances(Typical:5.0pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramete

CS1N60C4D-CRMicro.pdf

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Datasheet Details

Part number:

CS1N60C4D

Manufacturer:

CR Micro

File Size:

454.95 KB

Description:

Silicon n-channel power mosfet.

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CS1N60C4D CS1N60C4D Silicon N-Channel Power MOSFET CR Micro

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