CS1N60C4D - Silicon N-Channel Power MOSFET
VDSS 600 V CS1N60 C4D, the silicon N-channel Enhanced ID 1.5 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 32 W which reduce the conduction loss, improve switching RDS(ON)Typ 7.0 Ω performance and enhance the avalanche energy.
The transistor can be used i
CS1N60C4D Features
* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:7.5nC) l Low Reverse transfer capacitances(Typical:5.0pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramete
