CS1N60A3H Datasheet, Mosfet, Huajing Microelectronics

CS1N60A3H Features

• Mosfet l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:4nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche energy Test Appli

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Part number:

CS1N60A3H

Manufacturer:

Huajing Microelectronics

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532.36kb

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📄 Datasheet

Description:

Silicon n-channel power mosfet. VDSS 600 V CS1N60 A3H, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD

CS1N60A3H Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS

TAGS

CS1N60A3H

Huajing Microelectronics

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