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CS1N60A4H

Silicon N-Channel Power MOSFET

CS1N60A4H Features

* l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:4nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Param

CS1N60A4H General Description

VDSS 600 V CS1N60 A4H, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 25 W which reduce the conduction loss, improve switching RDS(ON)Typ 11 Ω performance and enhance the avalanche energy. The transistor can be used .

CS1N60A4H Datasheet (417.31 KB)

Preview of CS1N60A4H PDF

Datasheet Details

Part number:

CS1N60A4H

Manufacturer:

CR Micro

File Size:

417.31 KB

Description:

Silicon n-channel power mosfet.

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CS1N60A4H Silicon N-Channel Power MOSFET CR Micro

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