CS1N60C1HD Datasheet - Huajing Microelectronics

CS1N60C1HD Silicon N-Channel Power MOSFET

CS1N60C1HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.5 3 7.0 performance and enhance the avalanche energy. The transistor can be used in various power swit.

CS1N60C1HD Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:7.5nC) l Low Reverse transfer capacitances(Typical:5.0pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter

CS1N60C1HD-HuajingMicroelectronics.pdf