Datasheet4U Logo Datasheet4U.com

CS1N60A1H Datasheet - Huajing Microelectronics

CS1N60A1H - Silicon N-Channel Power MOSFET

CS1N60 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 0.8 3 11 performance and enhance the avalanche energy.

The transistor can be used in various power switc

CS1N60A1H Features

* l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:4nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Paramete

CS1N60A1H-HuajingMicroelectronics.pdf

Preview of CS1N60A1H PDF
CS1N60A1H Datasheet Preview Page 2 CS1N60A1H Datasheet Preview Page 3

Datasheet Details

Part number:

CS1N60A1H

Manufacturer:

Huajing Microelectronics

File Size:

537.34 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

📌 All Tags