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CS1N60A23H Datasheet - CR Micro

Silicon N-Channel Power MOSFET

CS1N60A23H Features

* l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:4nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TA= 25℃ unless otherwise specified）： Symbol Paramete

CS1N60A23H General Description

VDSS 600 CS1N60 A23H, the silicon N-channel Enhanced ID 0.8 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 which reduce the conduction loss, improve switching RDS(ON)Typ 11 performance and enhance the avalanche energy. The transistor can be used in various pow.

CS1N60A23H Datasheet (514.92 KB)

Preview of CS1N60A23H PDF

Datasheet Details

Part number:

CS1N60A23H

Manufacturer:

CR Micro

File Size:

514.92 KB

Description:

Silicon n-channel power mosfet.

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CS1N60A23H Silicon N-Channel Power MOSFET CR Micro

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