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CS1N60C1H Silicon N-Channel Power MOSFET

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Description

Silicon N-Channel Power MOSFET ○R CS1N60 C1H General .
CS1N60 C1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

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Datasheet Specifications

Part number
CS1N60C1H
Manufacturer
Huajing Microelectronics
File Size
614.17 KB
Datasheet
CS1N60C1H-HuajingMicroelectronics.pdf
Description
Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤10.5Ω)
* Low Gate Charge (Typical Data: 8.7nC)
* Low Reverse transfer capacitances(Typical:2.8pF)

Applications

* Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pu

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