CS1N60C1H Datasheet - Huajing Microelectronics

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CS1N60C1H Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS1N60 C1H General .
CS1N60 C1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

CS1N60C1H-HuajingMicroelectronics.pdf

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Datasheet Details

Part number:

CS1N60C1H

Manufacturer:

Huajing Microelectronics

File Size:

614.17 KB

Description:

Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤10.5Ω)
* Low Gate Charge (Typical Data: 8.7nC)
* Low Reverse transfer capacitances(Typical:2.8pF)

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pu

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CS1N60C1H Silicon N-Channel Power MOSFET Huajing Microelectronics

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