CS1N60C1H Datasheet, Mosfet, Huajing Microelectronics

CS1N60C1H Features

• Mosfet
• Fast Switching
• Low ON Resistance(Rdson≤10.5Ω)
• Low Gate Charge (Typical Data: 8.7nC)
• Low Reverse transfer capacitances(Typical:2.8pF)
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CS1N60C1H

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Huajing Microelectronics

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS1N60 C1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conducti

CS1N60C1H Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a

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CS1N60C1H

Huajing Microelectronics

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