CS1N60C1H Datasheet - Huajing Microelectronics

CS1N60C1H Silicon N-Channel Power MOSFET

CS1N60 C1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization an.

CS1N60C1H Features

* Fast Switching

* Low ON Resistance(Rdson≤10.5Ω)

* Low Gate Charge (Typical Data: 8.7nC)

* Low Reverse transfer capacitances(Typical:2.8pF)

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwi

CS1N60C1H-HuajingMicroelectronics.pdf