Datasheet Details
- Part number
- CS1N60C1H
- Manufacturer
- Huajing Microelectronics
- File Size
- 614.17 KB
- Datasheet
- CS1N60C1H-HuajingMicroelectronics.pdf
- Description
- Silicon N-Channel Power MOSFET
CS1N60C1H Description
Silicon N-Channel Power MOSFET ○R CS1N60 C1H General .
CS1N60 C1H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve.
CS1N60C1H Features
* Fast Switching
* Low ON Resistance(Rdson≤10.5Ω)
* Low Gate Charge (Typical Data: 8.7nC)
* Low Reverse transfer capacitances(Typical:2.8pF)
CS1N60C1H Applications
* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 dv/dt a3
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pu
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