CS1N60C1H Datasheet - Huajing Microelectronics

Silicon N-Channel Power MOSFET

CS1N60C1H Features

* Fast Switching

* Low ON Resistance(Rdson≤10.5Ω)

* Low Gate Charge (Typical Data: 8.7nC)

* Low Reverse transfer capacitances(Typical:2.8pF)

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwi

CS1N60C1H General Description

CS1N60 C1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization an.

CS1N60C1H Datasheet (614.17 KB)

CS1N60C1H Datasheet Preview — Preview of CS1N60C1H PDF

Datasheet Details

Part number:

CS1N60C1H

Manufacturer:

Huajing Microelectronics

File Size:

614.17 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

CS1N60C1HD Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS1N60C3H Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS1N60C4D Silicon N-Channel Power MOSFET (CR Micro)

CS1N60C4H Silicon N-Channel Power MOSFET (CR Micro)

CS1N60 VDMOS (EDN)

CS1N60A1H Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS1N60A23H Silicon N-Channel Power MOSFET (CR Micro)

CS1N60A3H Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS1N60A4H Silicon N-Channel Power MOSFET (CR Micro)

CS1N60B1R Silicon N-Channel Power MOSFET (Huajing Microelectronics)

TAGS

CS1N60C1H Silicon N-Channel Power MOSFET Huajing Microelectronics

Image Gallery

CS1N60C1H Features

CS1N60C1H General Description

Datasheet Details

File Size:

Description:

CS1N60C1H Distributor