CS1N60C4H Datasheet - CR Micro

CS1N60C4H Silicon N-Channel Power MOSFET

CS1N60 C4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization an.

CS1N60C4H Features

* l Fast Switching l Low ON Resistance(Rdson≤10.5Ω) l Low Gate Charge (Typical Data:4.7nC) l Low Reverse transfer capacitances(Typical:2.9pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Para

CS1N60C4H-CRMicro.pdf