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CS1N60C4H - Silicon N-Channel Power MOSFET

CS1N60C4H Description

Silicon N-Channel Power MOSFET ○R CS1N60 C4H General .
CS1N60 C4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

CS1N60C4H Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Volt

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Datasheet Details

Part number
CS1N60C4H
Manufacturer
CR Micro
File Size
419.10 KB
Datasheet
CS1N60C4H-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET CR Micro
CR Micro CS1N60C4H-like datasheet