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CS1N50A1 Datasheet - Huajing Microelectronics

CS1N50A1 - Silicon N-Channel Power MOSFET

VDSS 500 V CS1N50 A1, the silicon N-channel Enhanced ID 1.0 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 W which reduce the conduction loss, improve switching RDS(ON)Typ 9.5 Ω performance and enhance the avalanche energy.

The transistor can be used in vario

CS1N50A1 Features

* l Fast Switching l Low ON Resistance(Rdson≤11Ω) l Low Gate Charge (Typical Data:4nC) l Low Reverse transfer capacitances(Typical:2.2pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parame

CS1N50A1-HuajingMicroelectronics.pdf

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Datasheet Details

Part number:

CS1N50A1

Manufacturer:

Huajing Microelectronics

File Size:

544.43 KB

Description:

Silicon n-channel power mosfet.

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