CS1N50A1 Datasheet - Huajing Microelectronics

CS1N50A1 Silicon N-Channel Power MOSFET

VDSS 500 V CS1N50 A1, the silicon N-channel Enhanced ID 1.0 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 W which reduce the conduction loss, improve switching RDS(ON)Typ 9.5 Ω performance and enhance the avalanche energy. The transistor can be used in vario.

CS1N50A1 Features

* l Fast Switching l Low ON Resistance(Rdson≤11Ω) l Low Gate Charge (Typical Data:4nC) l Low Reverse transfer capacitances(Typical:2.2pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parame

CS1N50A1-HuajingMicroelectronics.pdf