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CS6N80A0H

Silicon N-Channel Power MOSFET

CS6N80A0H Features

* l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:35nC) l Low Reverse transfer capacitances(Typical:15pF) l 100% Single Pulse avalanche energy Test Applications： Atx Power、LED Power. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EA

CS6N80A0H General Description

CS6N80 A0H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization an.

CS6N80A0H Datasheet (736.24 KB)

Preview of CS6N80A0H PDF

Datasheet Details

Part number:

CS6N80A0H

Manufacturer:

Huajing Microelectronics

File Size:

736.24 KB

Description:

Silicon n-channel power mosfet.

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CS6N80A0H Silicon N-Channel Power MOSFET Huajing Microelectronics

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