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CS6N80A8

Silicon N-Channel Power MOSFET

CS6N80A8 Features

* l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:35nC) l Low Reverse transfer capacitances(Typical:15pF) l 100% Single Pulse avalanche energy Test Applications： Atx Power、LED Power. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EA

CS6N80A8 General Description

CS6N80 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and .

CS6N80A8 Datasheet (847.98 KB)

Preview of CS6N80A8 PDF

Datasheet Details

Part number:

CS6N80A8

Manufacturer:

Huajing Microelectronics

File Size:

847.98 KB

Description:

Silicon n-channel power mosfet.

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CS6N80A8 Silicon N-Channel Power MOSFET Huajing Microelectronics

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