CS6N80A8 Datasheet (Huajing Microelectronics) - Silicon N-Channel Power MOSFET

CS6N80A8, Silicon N-Channel Power MOSFET

CS6N80 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and

CS6N80A8 Features

* l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:35nC) l Low Reverse transfer capacitances(Typical:15pF) l 100% Single Pulse avalanche energy Test Applications： Atx Power、LED Power. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EA