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CS6N80FA9 Datasheet - Huajing Microelectronics

Silicon N-Channel Power MOSFET

CS6N80FA9 Features

* l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:35nC) l Low Reverse transfer capacitances(Typical:15pF) l 100% Single Pulse avalanche energy Test Applications: Atx Power、LED Power. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EA

CS6N80FA9 General Description

CS6N80F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and.

CS6N80FA9 Datasheet (846.69 KB)

Preview of CS6N80FA9 PDF

Datasheet Details

Part number:

CS6N80FA9

Manufacturer:

Huajing Microelectronics

File Size:

846.69 KB

Description:

Silicon n-channel power mosfet.

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