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CS60N06C4 - Silicon N-Channel Power MOSFET

CS60N06C4 Description

Silicon N-Channel Power MOSFET CS60N06 C4 ○R General .
CS60N06 C4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

CS60N06C4 Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Vol

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Datasheet Details

Part number
CS60N06C4
Manufacturer
Huajing Microelectronics
File Size
687.54 KB
Datasheet
CS60N06C4-HuajingDiscreteDevices.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET Huajing Microelectronics
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