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CS9N90ANHD Silicon N-Channel Power MOSFET

CS9N90ANHD Description

Silicon N-Channel Power MOSFET ○R CS9N90 ANHD General .
CS9N90 ANHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

CS9N90ANHD Features

* Fast Switching
* ESD Improved Capability
* Low Gate Charge (Typical Data: 65nC)
* Low Reverse transfer capacitances(Typical: 13pF)

CS9N90ANHD Applications

* Power switch circuit of PC POWER. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a3 dv/dt a2 PD VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pul

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Silicon N-Channel Power MOSFET Huajing Microelectronics
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