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2SB1255 PNP Transistor

2SB1255 Description

isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE= 5000(Min)@IC= -6A. Low-Collector Saturation Voltage- : VCE(sat)= -2. Complement to Type 2SD.

2SB1255 Applications

* Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak

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Datasheet Details

Part number
2SB1255
Manufacturer
INCHANGE
File Size
213.48 KB
Datasheet
2SB1255-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1255-like datasheet