Datasheet Details
- Part number
- 2SB541
- Manufacturer
- INCHANGE
- File Size
- 209.19 KB
- Datasheet
- 2SB541-INCHANGE.pdf
- Description
- PNP Transistor
2SB541 Description
isc Silicon PNP Power Transistors 2SB541 .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min).
High Power Dissipation-
: PC= 100W(Max)@TC=25℃.
Complement to Type 2SD388.
2SB541 Applications
* Designed for audio frequency power amplifier applications.
* Suitable for output stage of 40~50 watts audio amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-110
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Volta
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