2SB541 Datasheet - INCHANGE

2SB541, PNP Transistor

isc Silicon PNP Power Transistors 2SB541 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). High Power Dissipation- : PC= 100W(Max)@TC=25℃. Complement to Type 2SD388.

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2SB541-INCHANGE.pdf

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Datasheet Details

Part number:

2SB541

Manufacturer:

INCHANGE

File Size:

209.19 KB

Description:

PNP Transistor

Applications

* Designed for audio frequency power amplifier applications.
* Suitable for output stage of 40~50 watts audio amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Volta

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2SB541 PNP Transistor INCHANGE

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