2SB541 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistors 2SB541 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). High Power Dissipation- : PC= 100W(Max)@TC=25℃. Complement to Type 2SD388.

📥 Download Datasheet

2SB541 Datasheet Preview — Preview of 2SB541 PDF

Datasheet Specifications

Part number: 2SB541
Manufacturer: INCHANGE
File Size: 209.19 KB
Datasheet: 2SB541-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for audio frequency power amplifier applications.
* Suitable for output stage of 40~50 watts audio amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Volta

2SB541 Distributors

📁 Related Datasheet

2SB544 2SB546A 2SB547A 2SB548 2SB549 2SB502A

📌 All Tags

2SB541 PNP Transistor INCHANGE

INCHANGE 2SB541-like datasheet