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2SB541 - PNP Transistor

2SB541 Description

isc Silicon PNP Power Transistors 2SB541 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). High Power Dissipation- : PC= 100W(Max)@TC=25℃. Complement to Type 2SD388.

2SB541 Applications

* Designed for audio frequency power amplifier applications.
* Suitable for output stage of 40~50 watts audio amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Volta

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Datasheet Details

Part number
2SB541
Manufacturer
INCHANGE
File Size
209.19 KB
Datasheet
2SB541-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
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