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2SB691 - PNP Transistor

2SB691 Description

isc Silicon PNP Power Transistor 2SB691 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2S.

2SB691 Applications

* Designed for low frequency power amplifier and power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC

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Datasheet Details

Part number
2SB691
Manufacturer
INCHANGE
File Size
215.75 KB
Datasheet
2SB691-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB691-like datasheet