Datasheet Details
- Part number
- 2SB691
- Manufacturer
- INCHANGE
- File Size
- 215.75 KB
- Datasheet
- 2SB691-INCHANGE.pdf
- Description
- PNP Transistor
2SB691 Description
isc Silicon PNP Power Transistor 2SB691 .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min).
Good Linearity of hFE.
Wide Area of Safe Operation.
Complement to Type 2S.
2SB691 Applications
* Designed for low frequency power amplifier and power
switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
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