2SB691 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor 2SB691 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2S.

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Datasheet Specifications

Part number: 2SB691
Manufacturer: INCHANGE
File Size: 215.75 KB
Datasheet: 2SB691-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for low frequency power amplifier and power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC

2SB691 Distributors

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2SB691 PNP Transistor INCHANGE

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