2SB697 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistors 2SB697 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min). High Current Capability. Wide Area of Safe Operation. Complement to Type.

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Datasheet Specifications

Part number: 2SB697
Manufacturer: INCHANGE
File Size: 211.88 KB
Datasheet: 2SB697-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for AF power amplifier applications.
* Recommended for output stage of 80W power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Coll

2SB697 Distributors

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2SB697 PNP Transistor INCHANGE

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