Datasheet4U Logo Datasheet4U.com

2SB696 - PNP Transistor

2SB696 Description

isc Silicon PNP Power Transistors 2SB696 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). High Current Capability. Wide Area of Safe Operation. Complement to Type.

2SB696 Applications

* Designed for AF power amplifier applications.
* Recommended for output stage of 60W power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Coll

📥 Download Datasheet

Preview of 2SB696 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB696
Manufacturer
INCHANGE
File Size
212.18 KB
Datasheet
2SB696-INCHANGE.pdf
Description
PNP Transistor

📁 Related Datasheet

  • 2SB697K - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB698 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
  • 2SB601 - PNP Transistor (NEC)
  • 2SB605 - PNP SILICON TRANSISTOR (NEC)
  • 2SB609 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB616 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB617 - Silicon Triple Diffused Transistor (ETC)
  • 2SB617A - Silicon Triple Diffused Transistor (ETC)

📌 All Tags

PNP Transistor INCHANGE
INCHANGE 2SB696-like datasheet