2SB696 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistors 2SB696 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). High Current Capability. Wide Area of Safe Operation. Complement to Type.

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Datasheet Specifications

Part number: 2SB696
Manufacturer: INCHANGE
File Size: 212.18 KB
Datasheet: 2SB696-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for AF power amplifier applications.
* Recommended for output stage of 60W power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Coll

2SB696 Distributors

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2SB696 PNP Transistor INCHANGE

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