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2SD1163A NPN Transistor

2SD1163A Description

isc Silicon NPN Power Transistor .
Collector Current: IC= 7A. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min). 100% avalanche tested. Minimum Lot-to-Lot vari.

2SD1163A Applications

* Designed for TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Pea

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Datasheet Details

Part number
2SD1163A
Manufacturer
INCHANGE
File Size
202.79 KB
Datasheet
2SD1163A-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1163A-like datasheet