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2SD1180 Datasheet - INCHANGE

2SD1180 NPN Transistor

*High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V (Min) *Low collector saturation voltage *With TO-126 package *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use in audio and radio frequency power amplifie.

2SD1180 Datasheet (179.38 KB)

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Datasheet Details

Part number:

2SD1180

Manufacturer:

INCHANGE

File Size:

179.38 KB

Description:

Npn transistor.

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2SD1180 NPN Transistor INCHANGE

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