Datasheet4U Logo Datasheet4U.com

2SD1180 NPN Transistor

2SD1180 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1180 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V (Min). Low collector saturation voltage. With TO-126 package. Minimum Lot-.

2SD1180 Applications

* Designed for use in audio and radio frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5

📥 Download Datasheet

Preview of 2SD1180 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD1180
Manufacturer
INCHANGE
File Size
179.38 KB
Datasheet
2SD1180-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD1185 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1187 - NPN TRANSISTOR (Toshiba Semiconductor)
  • 2SD1189 - NPN Transistor (Rohm)
  • 2SD110 - Silicon NPN Power Transistor (Inchange Semiconductor Company)
  • 2SD1101 - NPN TRANSISTOR (Hitachi Semiconductor)
  • 2SD1105 - Silicon NPN Power Transistor (Inchange Semiconductor Company)
  • 2SD1111 - NPN TRANSISTOR (Sanyo Semicon Device)
  • 2SD1113 - Silicon NPN Power Transistor (Inchange Semiconductor)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD1180-like datasheet