2SD1180 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1180 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V (Min). Low collector saturation voltage. With TO-126 package. Minimum Lot-.

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Datasheet Specifications

Part number: 2SD1180
Manufacturer: INCHANGE
File Size: 179.38 KB
Datasheet: 2SD1180-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in audio and radio frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5

2SD1180 Distributors

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2SD1180 NPN Transistor INCHANGE

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