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2SD1185 NPN Transistor

2SD1185 Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1200V (Min). High Reliability. Minimum Lot-to-Lot variations for robust device performance and reliable o.

2SD1185 Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A ICP Collector Current-Peak P

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Datasheet Details

Part number
2SD1185
Manufacturer
INCHANGE
File Size
198.51 KB
Datasheet
2SD1185-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1185-like datasheet