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2SD1313 NPN Transistor

2SD1313 Description

isc Silicon NPN Power Transistor 2SD1313 .
High Power Dissipation. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min). High Speed Switching. Low Collector Saturati.

2SD1313 Applications

* High power amplifier applications.
* High power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 25 A

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Datasheet Details

Part number
2SD1313
Manufacturer
INCHANGE
File Size
207.86 KB
Datasheet
2SD1313-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1313-like datasheet