2SD1313 Datasheet - INCHANGE

datasheet Preview Page 1 from Datasheet4u.com

2SD1313 NPN Transistor

isc Silicon NPN Power Transistor 2SD1313 .
High Power Dissipation. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min). High Speed Switching. Low Collector Saturati.

2SD1313-INCHANGE.pdf

2SD1313 Datasheet Preview — Preview of 2SD1313 PDF

Datasheet Details

Part number:

2SD1313

Manufacturer:

INCHANGE

File Size:

207.86 KB

Description:

NPN Transistor

Applications

* High power amplifier applications.
* High power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 25 A

2SD1313 Distributors

📁 Related Datasheet

2SD1310 2SD1312 2SD1314 2SD1316 2SD1318 2SD1302

📌 All Tags

2SD1313 NPN Transistor INCHANGE

INCHANGE 2SD1313-like datasheet